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RQJ0202VGDQA - Silicon P Channel MOS FET Power Switching

Description

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Features

  • Low on-resistance RDS(on) = 83 mΩ typ (VGS =.
  • 4.5 V, ID =.
  • 1.4 A).
  • Low drive current.
  • High speed switching.
  • 2.5 V gate drive R07DS0291EJ0500 Rev.5.00 Jan 10, 2014 Outline.

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Datasheet Details

Part number RQJ0202VGDQA
Manufacturer Renesas
File Size 180.82 KB
Description Silicon P Channel MOS FET Power Switching
Datasheet download datasheet RQJ0202VGDQA Datasheet

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Full PDF Text Transcription

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Preliminary Datasheet RQJ0202VGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 83 mΩ typ (VGS = –4.5 V, ID = –1.4 A) • Low drive current • High speed switching • 2.5 V gate drive R07DS0291EJ0500 Rev.5.00 Jan 10, 2014 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 G 1. Source 2. Gate 3. Drain S 1 Note: Marking is “VG”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings –20 +8 / –12 –2.7 –8.0 –2.7 0.8 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.
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