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RQJ0201UGDQA - Silicon P-Channel MOS FET

Description

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Features

  • Low on-resistance RDS(on) = 53 mΩ typ (VGS =.
  • 4.5 V, ID =.
  • 1.8 A).
  • Low drive current.
  • High speed switching.
  • 2.5 V gate drive Outline.

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Full PDF Text Transcription

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RQJ0201UGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 53 mΩ typ (VGS = –4.5 V, ID = –1.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “UG”. Preliminary Datasheet R07DS0290EJ0500 Rev.5.00 Jan 10, 2014 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature VDSS VGSS ID ID(pulse) Note1 IDR Pch(pulse) Note2 Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings –20 +8 / –12 –3.
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