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RJS6005WDPK - SiC Schottky Barrier Diode

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • New semiconductor material: Silicon Carbide Diode.
  • No reverse recovery / No forward recovery Outline.

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Full PDF Text Transcription

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RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 12 3 Preliminary Datasheet R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 2, 4 13 1. Anode 2. Cathode 3. Anode 4. Cathode Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature Notes: 1. Per leg/device Symbol VRM IF Note1 IFSM Note1 Tj Tstg Electrical Characteristics Item Forward voltage Reverse current Reverse recovery time Notes: 1. Per leg/device 2. Per leg Symbol VF Note2 IR Note1 trr Note2 Min ⎯ ⎯ ⎯ Typ 1.
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