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RJS6005TDPP-EJ - SiC Schottky Barrier Diode

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • New semiconductor material: Silicon Carbide Diode.
  • No reverse recovery / No forward recovery Outline.

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Full PDF Text Transcription

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RJS6005TDPP-EJ 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A (Package name: TO-220FP-2L) 12 Preliminary Datasheet R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 1 1. Cathode 2. Anode 2 Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature Electrical Characteristics Symbol VRM IF IFSM Tj Tstg Item Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min ⎯ ⎯ ⎯ Typ 1.5 ⎯ 15 Ratings 600 15 90 150 –55 to +150 (Ta = 25°C) Unit V A A °C °C (Ta = 25°C) Max Unit Test conditions 1.
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