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RJS6004WDPK - SiC Schottky Barrier Diode

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • New semiconductor material: Silicon Carbide Diode.
  • No reverse recovery / No forward recovery Outline.

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Full PDF Text Transcription

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RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 12 3 Preliminary Datasheet R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 2, 4 13 1. Anode 2. Cathode 3. Anode 4. Cathode Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Per leg/device Electrical Characteristics Symbol VRM IF Note1 IFSM Note1 θj-c Tj Tstg Item Forward voltage Reverse current Reverse recovery time Notes: 1. Per leg/device 2. Per leg Symbol VF Note2 IR Note1 trr Note2 Min ⎯ ⎯ ⎯ Typ 1.
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