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RJP60V0DPM-80 - IGBT

Description

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Features

  • High breakdown-voltage.
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C).
  • Short circuit withstand time (6 μs typ. ).
  • Trench gate and thin wafer technology (G6H series) Outline.

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Full PDF Text Transcription

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RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Short circuit withstand time (6 μs typ.) • Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF) 1 2 3 G Preliminary Datasheet R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 C 1. Gate 2. Collector 3. Emitter E Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.
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