Datasheet4U Logo Datasheet4U.com

RJP30H1DPD - N-Channel IGBT

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJP3053DPP IGBT Renesas Technology
RJP3054DPP IGBT Renesas Technology
RJP3055DPP IGBT Renesas Technology
RJP3056DPK IGBT Renesas Technology
RJP3057DPK IGBT Renesas Technology

Other Datasheets by Renesas

Part Number Description
RJP30H1DPP-M0 N-Channel IGBT
RJP30H1 N-Channel IGBT
RJP30H2A Silicon N-Channel IGBT
RJP30H2DPK-M0 N-Channel Power MOSFET
RJP30E2 N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E C G 12 3 Absolute Maximum Ratings (Tc = 25°C) www.DataSheet.co.kr Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.
Published: |