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RJP30E2DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
Preliminary Datasheet
R07DS0347EJ0200 Rev.2.00
Apr 12, 2011
C
1 23
1. Gate
2. Collector
G
3. Emitter
E
Absolute Maximum Ratings
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tc = 25°C
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RJP30E2 Datasheet
