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RJP30H1DPD
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max.
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
C
4
12 3
G E
Preliminary Datasheet
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
Absolute Maximum Ratings
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
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RJP30H1 Datasheet
