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RJL6013DPE - N-Channel Power MOSFET

Description

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Features

  • Built-in fast recovery diode.
  • Low on-resistance RDS(on) = 0.66  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching R07DS0437EJ0200 (Previous: REJ03G1748-0100) Rev.2.00 Jun 16, 2011 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.66  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0437EJ0200 (Previous: REJ03G1748-0100) Rev.2.00 Jun 16, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name LDPAK(S)-(1)) 4 D 1 2 G 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings www.DataSheet.co.
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