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RJL5013DPE - N-Channel Power MOSFET

Description

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Features

  • Built-in fast recovery diode.
  • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching R07DS0359EJ0200 (Previous: REJ03G1755-0100) Rev.2.00 Apr 18, 2011 Outline.

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Full PDF Text Transcription

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Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching R07DS0359EJ0200 (Previous: REJ03G1755-0100) Rev.2.00 Apr 18, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S www.DataSheet.co.
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