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RJL5013DPP-E0 - MOSFET

Description

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Features

  • Built-in fast recovery diode.
  • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching Outline.

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Full PDF Text Transcription

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RJL5013DPP-E0 500 V - 14 A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
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