Datasheet4U Logo Datasheet4U.com

RJL5012DPP-M0 - Silicon N Channel MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Built-in fast recovery diode.
  • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJL5014DPK Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
RJL5014DPP Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
RJL5015DPK Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
RJL5018DPK Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
RJL5020DPK Silicon N Channel MOS FET High Speed Power Switching Renesas Technology

Other Datasheets by Renesas

Part Number Description
RJL5012DPP Silicon N Channel MOS FET
RJL5012DPE N-Channel Power MOSFET
RJL5013DPE N-Channel Power MOSFET
RJL5013DPP Silicon N-Channel MOSFET
RJL5013DPP-E0 MOSFET

Full PDF Text Transcription

Click to expand full text
RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current VGSS IDNote4 ID Note1 (pulse) Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1.
Published: |