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R1LV1616HSA-4LI - Wide Temperature Range Version 16M SRAM

Description

The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit.

R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Features

  • Single 3.0 V supply: 2.7 V to 3.6 V.
  • Fast access time: 45/55 ns (max).
  • Power dissipation:  Active: 9 mW/MHz (typ)  Standby: 1.5 µW (typ).
  • Completely static memory.  No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for battery backup.
  • Temperature range:.
  • 40 to +85°C.
  • Byte function (×8 mode) av.

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Datasheet Details

Part number R1LV1616HSA-4LI
Manufacturer Renesas
File Size 197.94 KB
Description Wide Temperature Range Version 16M SRAM
Datasheet download datasheet R1LV1616HSA-4LI Datasheet

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Full PDF Text Transcription

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R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit) REJ03C0195-0101 Rev.1.01 Nov.18.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting. Features • Single 3.0 V supply: 2.7 V to 3.6 V • Fast access time: 45/55 ns (max) • Power dissipation:  Active: 9 mW/MHz (typ)  Standby: 1.5 µW (typ) • Completely static memory.
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