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R1LV1616HSA-4SI - Wide Temperature Range Version 16M SRAM

Download the R1LV1616HSA-4SI datasheet PDF. This datasheet also covers the R1LV1616H-I variant, as both devices belong to the same wide temperature range version 16m sram family and are provided as variant models within a single manufacturer datasheet.

Description

The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword  16-bit / 2-Mword  8-bit with embedded ECC.

R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Features

  • Single 3.0 V supply: 2.7 V to 3.6 V.
  • Fast access time: 45/55 ns (max).
  • Power dissipation:  Active: 9 mW/MHz (typ)  Standby: 1.5 W (typ).
  • Completely static memory.  No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for battery backup.
  • Temperature range: 40 to +85C.
  • Byte function (x8 mode) available by BYTE# & A-1.
  • Embedded ECC (e.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1LV1616H-I_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number R1LV1616HSA-4SI
Manufacturer Renesas
File Size 395.49 KB
Description Wide Temperature Range Version 16M SRAM
Datasheet download datasheet R1LV1616HSA-4SI Datasheet

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Other Datasheets by Renesas

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
R1LV1616HSA-I Series Wide Temperature Range Version 16 M SRAM (1-Mword  16-bit / 2-Mword  8-bit) REJ03C0195-0103 Rev. 1.03 Feb.20.2020 Description The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword  16-bit / 2-Mword  8-bit with embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting. Features  Single 3.0 V supply: 2.7 V to 3.6 V  Fast access time: 45/55 ns (max)  Power dissipation:  Active: 9 mW/MHz (typ)  Standby: 1.5 W (typ)  Completely static memory.
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