Datasheet4U Logo Datasheet4U.com

R1LV1616H-I - Wide Temperature Range Version 16M SRAM

Description

The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit.

R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Features

  • Single 3.0 V supply: 2.7 V to 3.6 V.
  • Fast access time: 45/55 ns (max).
  • Power dissipation:  Active: 9 mW/MHz (typ)  Standby: 1.5 µW (typ).
  • Completely static memory.  No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for battery backup.
  • Temperature range:.
  • 40 to +85°C.
  • Byte function (×8 mode) av.

📥 Download Datasheet

Datasheet Details

Part number R1LV1616H-I
Manufacturer Renesas
File Size 395.49 KB
Description Wide Temperature Range Version 16M SRAM
Datasheet download datasheet R1LV1616H-I Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit) REJ03C0195-0101 Rev.1.01 Nov.18.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting. Features • Single 3.0 V supply: 2.7 V to 3.6 V • Fast access time: 45/55 ns (max) • Power dissipation:  Active: 9 mW/MHz (typ)  Standby: 1.5 µW (typ) • Completely static memory.
Published: |