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NP90N06VLG - N-Channel MOSFET

Description

The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Logic level.
  • Built-in gate protection diode.
  • Super low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • High current rating ID(DC) = ±90 A.
  • Low input capacitance Ciss = 4600 pF TYP.
  • Designed for automotive.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N06VLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N06VLG-E1-AY Note NP90N06VLG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZP) typ. 0.27 g FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current rating ID(DC) = ±90 A • Low input capacitance Ciss = 4600 pF TYP.
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