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NP90N06VDK - N-Channel MOSFET

Description

NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance ⎯ RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A).
  • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Full PDF Text Transcription

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NP90N06VDK 60 V – 90 A – N-channel Power MOS FET Application: Automotive Data Sheet R07DS1297EJ0100 Rev.1.00 Oct 26, 2015 Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) • Designed for automotive application and AEC-Q101 qualified Outline Drain Gate Body Diode Source TO-252(MP-3ZP) Equivalent circuit Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
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