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NP90N03G - 30V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP90N03G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V，ID =90A RDS(ON)(Typ. )=3.8mΩ @VGS=10V RDS(ON)(Typ. )=5.1mΩ @VGS=4.5V High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet Details

Part number NP90N03G
Manufacturer natLinear
File Size 617.62 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP90N03G Datasheet
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NP90N03G 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP90N03G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features  VDS =30V，ID =90A RDS(ON)(Typ.)=3.8mΩ @VGS=10V RDS(ON)(Typ.)=5.1mΩ @VGS=4.
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