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NP60N055VUK - MOSFET

Description

The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A).
  • Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Full PDF Text Transcription

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NP60N055VUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0588EJ0200 Rev.2.00 May 24, 2018 Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
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