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NP60P02D6 - 20V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP60P02D6 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS =-20V ID =-60A RDS(ON)(Typ. )=3.8mΩ @VGS=-4.5V RDS(ON)(Typ. )=4.4mΩ @VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • 150 °C operating temperature.
  • 100% UIS tested Marking and pin assignment.

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Datasheet preview – NP60P02D6

Datasheet Details

Part number NP60P02D6
Manufacturer natLinear
File Size 851.37 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP60P02D6 Datasheet
Additional preview pages of the NP60P02D6 datasheet.

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NP60P02D6 20V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP60P02D6 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-20V ID =-60A RDS(ON)(Typ.)=3.8mΩ @VGS=-4.5V RDS(ON)(Typ.)=4.4mΩ @VGS=-2.
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