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NP60N055MUK - MOS FIELD EFFECT TRANSISTOR

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A).
  • Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Datasheet Details

Part number NP60N055MUK
Manufacturer Renesas
File Size 106.63 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP60N055MUK Datasheet

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Full PDF Text Transcription

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Preliminary Data Sheet NP60N055MUK, NP60N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0598EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
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