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NP36P06KDG - P-channel Power MOSFET

Datasheet Summary

Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 A ).
  • Low input capacitance : Ciss = 3100 pF Typ.
  • Designed for automotive.

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Datasheet Details

Part number NP36P06KDG
Manufacturer Renesas
File Size 1.31 MB
Description P-channel Power MOSFET
Datasheet download datasheet NP36P06KDG Datasheet
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NP36P06KDG -60V – -36A – P-channel Power MOS FET Application : Automotive Datasheet R07DS1524EJ0100 Rev.1.00 Jun. 24, 2022 Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 A )  Low input capacitance : Ciss = 3100 pF Typ.  Designed for automotive application and AEC-Q101 qualified.  Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 123 1. Gate 2. Drain 3. Source 4.
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