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NP29N06QUK
60 V – 30 A – Dual N-channel Power MOS FET Application: Automotive
Data Sheet
R07DS1331EJ0200 Rev.2.00
May 24, 2018
Description
NP29N06QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 21 m MAX. (VGS = 10 V, ID = 15 A)
Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Small size package 8-pin HSON dual
Outline
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
NP29N06QUK Datasheet
