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NP22N055HLE - N-Channel Power MOSFET

Datasheet Summary

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A).
  • Low Ciss : Ciss = 730 pF TYP.
  • Built-in gate protection diode.

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Datasheet Details

Part number NP22N055HLE
Manufacturer Renesas
File Size 205.20 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NP22N055HLE Datasheet
Additional preview pages of the NP22N055HLE datasheet.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HLE, NP22N055ILE, NP22N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A) • Low Ciss : Ciss = 730 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HLE NP22N055ILE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP22N055SLE TO-252 (JEDEC) / MP-3ZK Note Not for new design.
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