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NP2309EFR - 20V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP2309EFR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS =-20V，ID =-2A RDS(ON)(Typ. )=61.5mΩ @VGS=-4.5V RDS(ON)(Typ. )=70.5mΩ @VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • ESD Rating: 2500V HBM.

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Datasheet Details

Part number NP2309EFR
Manufacturer natLinear
File Size 379.35 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP2309EFR Datasheet
Additional preview pages of the NP2309EFR datasheet.

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NP2309EFR 20V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2309EFR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-20V，ID =-2A RDS(ON)(Typ.)=61.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=70.5mΩ @VGS=-2.
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