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HITK0202MP - Silicon N Channel MOS FET Power Switching

Description

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Features

  • Low on-resistance RDS(on) = 42 m typ (VGS = 4.5 V, ID = 1.9 A).
  • Low drive current.
  • High speed switching.
  • 2.5 V gate drive R07DS0480EJ0200 Rev.2.00 May 09, 2013 Outline.

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Datasheet Details

Part number HITK0202MP
Manufacturer Renesas
File Size 129.12 KB
Description Silicon N Channel MOS FET Power Switching
Datasheet download datasheet HITK0202MP Datasheet

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Full PDF Text Transcription

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Preliminary Datasheet HITK0202MP 20V, 3.8A, 55mmax. Silicon N Channel MOS FET Power Switching Features  Low on-resistance RDS(on) = 42 m typ (VGS = 4.5 V, ID = 1.9 A)  Low drive current  High speed switching  2.5 V gate drive R07DS0480EJ0200 Rev.2.00 May 09, 2013 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 S 1 G 1. Source 2. Gate 3. Drain Note: Marking is “RV”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 20 12 3.8 12 3.8 0.8 150 –55 to +150 Unit V V A A A W C C Notes: 1.
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