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Preliminary Datasheet
HITK0201MP
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 25 m typ (VGS = 4.5 V, ID = 2.4 A) Low drive current High speed switching 2.5 V gate drive R07DS0479EJ0100 Rev.1.00 Jun 22, 2011
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 D 3 G 1 2 S 1 2 1. Source 2. Gate 3. Drain
Note:
Marking is “QG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 20 12 4.5 15 4.5 0.8 150 –55 to +150 Unit V V A A A W C C
Notes: 1. PW 10 s, duty cycle 1% 2.
HITK0201MP Datasheet
