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RQA0009TXDQS - Silicon N-Channel MOS FET

Features

  • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz).
  • Compact package capable of surface mounting.
  • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R ) 3 3 2 1 1 4 1. Gate 2. Source 3. Drain 4. Source 2, 4 Note: Marking is “TX”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 3.
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