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RQA0002DNS
Silicon N-Channel MOS FET
REJ03G0583-0301 Rev.3.01 Nov 21, 2007
Features
• High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) • Small outline package (WSON0504-2: 5.0 × 4.0 × 0.8 mm)
Outline
RENESAS Package code: PWSN0002ZA-B (Package name: HWSON-2 )
3 3 2
1
1 2
3
1. Gate 2. Source 3. Drain
1 2
Note:
Marking is “RQA0002”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID PchNote Tch Tstg Ratings 16 ±5 3.8 15 150 –55 to +150 Unit V V A W °C °C
This Device is sensitive to electro static discharge.
RQA0002DNS Datasheet
