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RQA0001DNS
Silicon N-Channel MOS FET
REJ03G0582-0300 Rev.3.00 Oct 11, 2006
Features
• High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)
Outline
RENESAS Package code: PWSN0002ZA-A (Package name: HWSON-2 )
3 2 3
1 1 3 2 1. Gate 2. Source 3. Drain
1 2
Note:
Marking is “A0001”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 0.8 5 150 –50 to +150 Unit V V A W °C °C
This Device is sensitive to Electro Static Discharge.
RQA0001DNS Datasheet
