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RJK0383DPA - Silicon N Channel Power MOS FET Power Switching

Key Features

  • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline WPAK 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 1 G1 8 G2 9 S2 S2 S2 6 7 5 4 3 2 1 (Bottom View) MOS1 MOS2 + SBD Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage tempera.

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Datasheet Details

Part number RJK0383DPA
Manufacturer Renesas
File Size 146.67 KB
Description Silicon N Channel Power MOS FET Power Switching
Datasheet download datasheet RJK0383DPA Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com RJK0383DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1723-0101 Preliminary Rev.1.01 Jul 10, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline WPAK 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 1 G1 8 G2 9 S2 S2 S2 6 7 5 4 3 2 1 (Bottom View) MOS1 MOS2 + SBD Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 Tch Tstg MOS1 30 ±20 15 60 15 11 12.