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RJK0380DPA - Silicon N Channel Power MOS FET

General Description

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Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • Outline.

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Datasheet Details

Part number RJK0380DPA
Manufacturer Renesas
File Size 109.80 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0380DPA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary www.DataSheet4U.com Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220 Power Switching Rev.2.20 May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ.