Datasheet4U Logo Datasheet4U.com

HAT2285WP - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • High density mounting.
  • Built-in Schottky Barrier Diode Outline.

📥 Download Datasheet

Datasheet Details

Part number HAT2285WP
Manufacturer Renesas
File Size 120.36 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2285WP Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HAT2201RJ N-Channel 100V MOSFET VBsemi
HAT200-S (HAT200-S - HAT1500-S) Current Transducer LEM
HAT2016R Silicon N-Channel Power MOSFET Hitachi Semiconductor
HAT2016R Silicon N-Channel Power MOSFET Renesas
HAT2016R Dual N-Channel 30V MOSFET VBsemi

Other Datasheets by Renesas

Part Number Description
HAT2281C Silicon N-Channel Power MOSFET
HAT2282C Silicon N-Channel Power MOSFET
HAT2287WP Silicon N-Channel Power MOSFET
HAT2200R Silicon N-Channel Power MOSFET
HAT2200WP Silicon N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1371-0310 Rev.3.10 May 13, 2010 Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Built-in Schottky Barrier Diode Outline RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D) 5 678 2 G1 4 32 1 78 D1 D1 56 S1/D2 S1/D2 4 G2 S1/D2(kelvin) 1 MOS1 S2 3 MOS2 and Schottky Barrier Diode 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
Published: |