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HAT2282C - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance RDS(on) = 173 mΩ typ. (at VGS = 4.5 V).
  • Low drive current.
  • High density mounting.
  • 2.5 V gate drive device Outline.

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Datasheet Details

Part number HAT2282C
Manufacturer Renesas
File Size 73.62 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2282C Datasheet

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Full PDF Text Transcription

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HAT2282C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1329-0100 Rev.1.00 Jan 26, 2006 23 45 DD DD 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate Absolute Maximum Ratings Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - Drain diode reverse Drain current Channel dissipation IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.
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