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HAT2217C
Silicon N Channel MOS FET Power Switching
REJ03G0449-0300 Rev.3.00 May 19.2005
Features
• Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2 3 4 5 DDD D Index band 4 5 6 2 3 6 G 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Symbol VDSS VGSS ID ID (pulse)Note1 IDR
Note 2
Ratings 60 +20 / –10 3 12 3
Unit V V A A A W °C °C
Channel dissipation Pch 1.25 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
HAT2217C Datasheet
