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HAT2215R - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • High density mounting Outline.

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Datasheet Details

Part number HAT2215R
Manufacturer Renesas
File Size 155.96 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2215R Datasheet

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Full PDF Text Transcription

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HAT2215R Silicon N Channel Power MOSFET High Speed Power Switching Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 7 65 1 234 78 DD 56 DD 2 4 G G S1 MOS1 S3 MOS2 Data Sheet REJ03G0486-0301 Rev.3.01 Jan 20, 2017 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 80 Gate to source voltage VGSS 20 Drain current ID 3.4 Drain peak current ID(pulse)Note1 20.4 Reverse drain current IDR 3.4 Channel dissipation Pch Note2 1.5 Channel dissipation Pch Note3 2.2 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW  10 s, duty cycle  1% 2.
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