Datasheet4U Logo Datasheet4U.com

HAT2210R - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • High density mounting.
  • Built-in Schottky Barrier Diode Outline.

📥 Download Datasheet

Datasheet Details

Part number HAT2210R
Manufacturer Renesas
File Size 177.30 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2210R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HAT2201RJ N-Channel 100V MOSFET VBsemi
HAT200-S (HAT200-S - HAT1500-S) Current Transducer LEM
HAT2016R Silicon N-Channel Power MOSFET Hitachi Semiconductor
HAT2016R Silicon N-Channel Power MOSFET Renesas
HAT2016R Dual N-Channel 30V MOSFET VBsemi

Other Datasheets by Renesas

Part Number Description
HAT2215R Silicon N-Channel Power MOSFET
HAT2217C Silicon N-Channel Power MOSFET
HAT2218R Silicon N-Channel Power MOSFET
HAT2200R Silicon N-Channel Power MOSFET
HAT2200WP Silicon N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
Data Sheet HAT2210R Silicon N Channel Power MOSFET with Schottky Barrier Diode High Speed Power Switching R07DS1368EJ0301 Rev.3.01 Jan 20, 2017 Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Built-in Schottky Barrier Diode Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 78 DD 56 DD 1234 2 4 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S 1 MOS1 S 3 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 MOS1 30 ±20 7.5 60 7.5 1.5 MOS2 & SBD 30 ±12 8.0 64 8.0 1.
Published: |