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BV1LF080EFJ-C - Automotive IPD 1ch Low-Side Switch

Description

BV1LF080EFJ-C is a 1ch low-side switch for automotive application.

Output slew rate are variably controlled by external resistance of the SR terminal.

It has built-in OCP, Dual TSD and Active Clamp function.

Driving Resistive,

Features

  • AEC-Q100 Qualified (Note 1).
  • Built-in Dual TSD (Note 2).
  • Built-in Over Current Protection Function (OCP).
  • Built-in Thermal Shutdown Function (TSD).
  • Built-in Active Clamp Function.
  • Built-in Diagnostic Function.
  • Built-in Slew Rate Control Function.
  • Directly Controllable from CMOS logic ICs.
  • On-Resistance RDS(ON) = 80mΩ (Typ) (VDD = 5 V, IOUT = 1.0 A, Tj = 25 °C).
  • Monolithic Power Management IC with Control Unit (CMOS) and Power MOSFET on a Single.

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Datasheet Details

Part number BV1LF080EFJ-C
Manufacturer ROHM
File Size 1.98 MB
Description Automotive IPD 1ch Low-Side Switch
Datasheet download datasheet BV1LF080EFJ-C Datasheet

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Full PDF Text Transcription

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Datasheet Automotive IPD 1ch Low-Side Switch with Slew Rate Control and Output Diagnostic Function BV1LF080EFJ-C Features  AEC-Q100 Qualified (Note 1)  Built-in Dual TSD (Note 2)  Built-in Over Current Protection Function (OCP)  Built-in Thermal Shutdown Function (TSD)  Built-in Active Clamp Function  Built-in Diagnostic Function  Built-in Slew Rate Control Function  Directly Controllable from CMOS logic ICs  On-Resistance RDS(ON) = 80mΩ (Typ) (VDD = 5 V, IOUT = 1.0 A, Tj = 25 °C)  Monolithic Power Management IC with Control Unit (CMOS) and Power MOSFET on a Single Chip (Note 1) Grade 1 (Note 2) This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS steep temperature rising detect).
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