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BV1LA025EFJ-C - Automotive IPD 1ch Low-Side Switch

Description

The BV1LA025EFJ-C is an automotive 1ch low side switch IC, which has built-in Dual TSD, OCP and active clamp function.

Driving Resistive, Inductive and Capacitive Load Block Diagram OUT Active Clamp Circuit IN Gate Dual TSD Control OCP GND  Product structure : Silicon in

Features

  • Built-in Dual TSD.
  • 1.
  • AEC-Q100 Qualified.
  • 2.
  • Built-in Over Current Protection Function(OCP).
  • Built-in Active Clamp Function.
  • Direct Control Enabled from CMOS Logic IC, etc.
  • On Resistance RDS(ON) = 25 mΩ (Typ) (when VIN  5 V, IOUT = 2.4 A, Tj  25 C).
  • Monolithic Power Management IC with the Control Block (CMOS) and Power MOS FET Mounted on a Single Chip.
  • 1 This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS stee.

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Datasheet Details

Part number BV1LA025EFJ-C
Manufacturer ROHM
File Size 1.91 MB
Description Automotive IPD 1ch Low-Side Switch
Datasheet download datasheet BV1LA025EFJ-C Datasheet

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Full PDF Text Transcription

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Datasheet Automotive IPD 1ch Low Side Switch BV1LA025EFJ-C Features ■ Built-in Dual TSD*1 ■ AEC-Q100 Qualified*2 ■ Built-in Over Current Protection Function(OCP) ■ Built-in Active Clamp Function ■ Direct Control Enabled from CMOS Logic IC, etc. ■ On Resistance RDS(ON) = 25 mΩ (Typ) (when VIN  5 V, IOUT = 2.4 A, Tj  25 C) ■ Monolithic Power Management IC with the Control Block (CMOS) and Power MOS FET Mounted on a Single Chip *1 This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS steep temperature rising detect).
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