Datasheet4U Logo Datasheet4U.com

RFW2140-10 - Power Amplifier

General Description

The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier.

It is connected by using bias and in/out matching circuit method with gold wire bonding.

Key Features

  • Small size by using simple matching circuit board.
  • Single Supply Voltage.
  • Heat sink 99.9% copper, gold plated.
  • High Productivity.
  • Low Manufacturing Cost.
  • GaAs HFET RFW2140-10.

📥 Download Datasheet

Datasheet Details

Part number RFW2140-10
Manufacturer RFHIC
File Size 172.44 KB
Description Power Amplifier
Datasheet download datasheet RFW2140-10 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RFW2N06RLE 2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET Intersil Corporation
RFW122 RFW122-M-PA ISM Transceiver Module Vishay RFWaves
RFW122-M RFW122-M-PA ISM Transceiver Module Vishay RFWaves
RFW122-M-PA RFW122-M-PA ISM Transceiver Module Vishay RFWaves

Other Datasheets by RFHIC

Part Number Description
RFW2500H10-28 Wideband Power Amplifier
RFW0836-10 Power Amplifier
RFW0882-10 Power Amplifier
RFW0902-10 Power Amplifier
RFW0947-10 Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Amplifier Product Features • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET RFW2140-10 Application • UMTS Repeater • RF Sub-Systems • Base Station www.DataSheet4U.com Package : DP-56 Description The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding.