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RFW0836-10 - Power Amplifier

General Description

The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier.

It is connected by using bias and in/out matching circuit method with gold wire bonding.

Key Features

  • Small size by using simple matching circuit board.
  • Single Supply Voltage.
  • Heat sink 99.9% copper, gold plated.
  • High Productivity.
  • Low Manufacturing Cost.
  • GaAs HFET RFW0836-10.

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Datasheet Details

Part number RFW0836-10
Manufacturer RFHIC
File Size 175.94 KB
Description Power Amplifier
Datasheet download datasheet RFW0836-10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Amplifier Product Features • Small size by using simple matching circuit board • Single Supply Voltage • Heat sink 99.9% copper, gold plated • High Productivity • Low Manufacturing Cost • GaAs HFET RFW0836-10 Application • Cellular Repeater • RF Sub-Systems • Base Station www.DataSheet4U.com Package : DP-56 Description The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding.