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RFW2N06RLE - 2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 2A, 60V.
  • rDS(on) = 0.160Ω.
  • UIS Rating Curve (Single Pulse).
  • Design Optimized For 5 Volt Gate Drive.
  • Can be Driven Directly from CMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Electrostatic Discharge Protected Ordering Inf.

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Full PDF Text Transcription (Reference)

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RFW2N06RLE Data Sheet July 1999 File Number 2838.3 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFW2N06RLE was designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor and relay drivers and emitter switches for bipolar transistors.