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RFHA1006 - 9W GaN WIDEBAND POWER AMPLIFIER

Description

The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Features

  • VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB.
  • Power Added Efficiency 60% -40°C to 85°C Operating Temperature.
  • RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
  • GND BASE Functional Block Diagram.
  • Product.

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Datasheet Details

Part number RFHA1006
Manufacturer RF Micro Devices
File Size 1.66 MB
Description 9W GaN WIDEBAND POWER AMPLIFIER
Datasheet download datasheet RFHA1006 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier RFHA1006 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 Features     VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB  Power Added Efficiency 60% -40°C to 85°C Operating Temperature   RF IN Pin 2,3 RF OUT / VDS Pin 6,7   GND BASE Functional Block Diagram  Product Description The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.
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