Datasheet4U Logo Datasheet4U.com

RFHA1003 - 9W GaN WIDEBAND

Description

The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Features

  • VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB.
  • Power Added Efficiency 70% -40°C to 85°C Operating Temperature.
  • RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
  • GND BASE Functional Block Diagram.
  • Product.

📥 Download Datasheet

Datasheet Details

Part number RFHA1003
Manufacturer RF Micro Devices
File Size 1.12 MB
Description 9W GaN WIDEBAND
Datasheet download datasheet RFHA1003 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER RFMD
RFH10N45 N-Channel Power MOSFET Intersil Corporation
RFH10N50 N-Channel Power MOSFET Intersil Corporation
RFH12N35 N-Channel Power MOSFET Intersil Corporation
RFH12N40 N-Channel Power MOSFET Intersil Corporation

Other Datasheets by RF Micro Devices

Part Number Description
RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER
RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER
RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER
RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier RFHA1003 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 Features     VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB  Power Added Efficiency 70% -40°C to 85°C Operating Temperature   RF IN Pin 2,3 RF OUT / VDS Pin 6,7   GND BASE Functional Block Diagram  Product Description The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.
Published: |