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RFH12N40 - N-Channel Power MOSFET

Description

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Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • 12A, 350V and 400V.
  • rDS(ON) = 0.380Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFH12N35 RFH12N40.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFH12N35, RFH12N40 Data Sheet October 1998 File Number 1630.2 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17434. Features • 12A, 350V and 400V • rDS(ON) = 0.
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