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Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 50
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
1@VGS=10V
0.22
PNMT50V02E N-Channel MOSFET
D (3) G (1)
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current- Continuous Drain Current-Pulsed(Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
S (2)
Symbol
VDS VGS ID IDM PD TJ, TSTG
Symbol
RθJA
Maximum
50 ±20 0.22 0.88 0.35 -55 to 150
Maximum
350
Units
V V A A W ℃
Units
℃/W
Rev.06
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