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CM50TU-24F - IGBT Module

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery Free-Wheel Diode.
  • Isolated Baseplate for Easy Heat Sinking.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CM50TU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 50 Amperes/1200 Volts J S - NUTS (5 TYP) CM N K P K R T (4 TYP.) P GUP EUP GVP EVP GWP EWP L B E N L N L M Q TC MEASURING POINT TC MEASURING POINT GUN EUN GVN EVN GWN EWN U V W J L N D A W - THICK x X - WIDE TAB (12 PLACES) J L N L V H C F G P GUP RTC EUP U GUN RTC EUN N EVN GVN RTC EWN EVP V GWN RTC GVP RTC EWP W A GWP RTC Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode.
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