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CM50TF-12H - IGBT Module

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N u v w E N D BuN EuN BvN EvN BwN EwN S - DIA. (2 TYP.) M R F R L F R L K Q TAB #110, t = 0.5 TAB #250, t = 0.8 G P H R P (BuP) GuP EuP u (BvP) GvP EvP v (BwP) GwP EwP w Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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