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CM50TF-28H - IGBT Module

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery (135ns) Free-Wheel Diode.
  • High Frequency Operation (20-25kHz).
  • Isolated Baseplate for Easy Heat Sinking.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CM50TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/1400 Volts X Z - M4 THD (7 TYP.) B uP E uP A C Q X S Q X N B vP E vP B wP E wP P B uN E uN P B vN E vN B wN E wN P G B E D G U V W N R K J N U T N W AA L M M AA L Y DIA. (4 TYP.) .110 TAB V F H AB P BuP P EuP BvP EvP BwP EwP Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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